QW model simulator for Si strain
Analysis tool for quantum wells of strained MOSFETs.
The semi-classical quantum subband valley-averaged mobility model takes into account valley splitting and anisotropy. It allows for a self-consistent solution of the drift-diffusion equations with quantum corrections using the averaged subband density of states and mobility. The characteristics of silicon MOSFETs with various stresses and strains in crystal directions can be predicted.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
